Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors
نویسندگان
چکیده
A method of using non-volatile and fast ferroelectric field-effect transistor (FeFET) devices to realize Boolean logic is proposed. First, the internal states are initialized. Then, gate body function as input terminals, which used write device, based on voltage. Finally, output signals can be easily read through drain current. Of 10 Institute Electrical Electronics Engineers (IEEE) standard gates, eight implemented proposed operation alone by following definitions listed herein. Thus, enable FeFET act functional a simple operating proposed, providing substantial contributions development computing in memory. The experimental results provide evidence efficacy this method.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2023
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202201137